mch6601 no.6458-1/7 features ? low on-resistance ? ultrahigh-speed switching ? 1.5v drive ? composite type with 2 mosfets contained in a single package, facilitating high-density mounting speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 10 v drain current (dc) i d --0.2 a drain current (pulse) i dp pw 10 s, duty cycle 1% --0.8 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7022a-006 ordering number : en6458c 70412 tkim/42806 msim tb-00002289/o3105pe msim tb-00001865/n2499 tsim ta-2457 mch6601 p-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : mcph6 ? jeita, jedec : sc-88, sc-70-6, sot-363 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 sanyo : mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 tl fa lot no. lot no. sanyo semiconductors data sheet mch6601-tl-e 65 4 12 3
mch6601 no.6458-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--100 a --0.4 --1.4 v forward transfer admittance | yfs | v ds =--10v, i d =--50ma 80 110 ms static drain-to-source on-state resistance r ds (on)1 i d =--50ma, v gs =--4v 8 10.4 r ds (on)2 i d =--30ma, v gs =--2.5v 11 15.4 r ds (on)3 i d =--1ma, v gs =--1.5v 27 54 input capacitance ciss v ds =--10v, f=1mhz 7.5 pf output capacitance coss 5.7 pf reverse transfer capacitance crss 1.8 pf turn-on delay time t d (on) see speci ed test circuit. 24 ns rise time t r 55 ns turn-off delay time t d (off) 120 ns fall time t f 130 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--100ma 1.43 nc gate-to-source charge qgs 0.18 nc gate-to-drain ?miller? charge qgd 0.25 nc diode forward voltage v sd i s =--100ma, v gs =0v --0.83 --1.2 v switching time test circuit ordering information device package shipping memo mch6601-tl-e mcph6 3,000pcs./reel pb free pw=10 s d.c. 1% 0v --4v v in v in p. g 50 g s i d = --50ma r l =300 v dd = --15v v ou t d mch6601
mch6601 no.6458-3/7 i d -- v ds i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a 0 0 --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.08 --0.09 --0.10 --0.4 --0.05 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 v gs = --1.5v --3.5v --6.0v --2.0v --4.0v --3.0v --2.5v 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0 --3.5 0 --0.02 --0.04 --0.06 --0.08 --0.10 --0.12 --0.14 --0.16 --0.18 --0.20 v ds = --10v it00077 it00078 ta= --25 c 25 c 75 c r ds (on) -- i d r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- gate-to-source voltage, v gs -- v drain current, i d -- a r ds (on) -- ta r ds (on) -- i d r ds (on) -- i d static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- ambient temperature, ta -- c drain current, i d -- a --0.01 1.0 --0.1 10 7 5 3 2 100 7 5 3 2 3 2 7 5 3 2 v gs = --2.5v --0.0001 --0.001 1000 7 5 3 2 100 7 5 3 2 10 23 23 57 v gs = --1.5v it00081 it00082 --25 c --25 c 25 c ta=75 c ta=75 c 25 c --0.01 0.01 --0.1 1.0 7 5 3 2 7 5 3 2 0.1 3 2 7 5 3 2 v ds = --10v --60 4 2 --40 6 --20 8 10 0 12 14 20 40 16 60 18 80 100 120 140 160 i d = --30ma, v gs = --2.5v i d = --50ma, v gs = --4.0v it00083 it00084 ta= --25 c 75 c 0 0 -- 1 -- 2 -- 3 5 -- 4 10 -- 5 15 20 25 -- 6 30 --7 --8 --9 --10 ta=25 c --0.01 1.0 --0.1 23 57 23 100 7 5 3 2 10 7 5 3 2 v gs = --4v it00079 it00080 ta=75 c 25 c --25 c i d = --30ma --50ma 25 c | y fs | -- i d forward transfer admittance, | y fs | -- s
mch6601 no.6458-4/7 sw time -- i d i s -- v sd diode forward voltage, v sd -- v source current, i s -- a drain current, i d -- a switching time, sw time -- ns --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --0.01 --0.1 5 3 2 7 5 3 2 v gs =0v it00085 --25 c 25 c ta=75 c --0.01 23 57 10 7 5 3 2 7 5 3 2 --0.1 1000 100 it00086 v dd = --15v v gs = --4v t f t r t d (off) t d (on) ciss, coss, crss -- v ds v gs -- qg drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v p d -- ta a s o drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 it01734 23 5 5 723 7 5 3 2 7 5 3 2 --0.01 --0.1 --1.0 --1.0 --10 operation in this area is limited by r ds (on). dc operation i dp = --0.8a i d = --0.2a pw 10 s 1ms 10ms 100ms it01733 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 1.6 0.6 0.8 1.0 1.2 1.4 0.2 0.4 -- 9 --10 v ds = --10v i d = --100ma 0 1.0 -- 5 10 7 5 3 2 7 5 3 2 --10 --15 100 --20 --30 --25 f=1mhz it00087 it00088 ciss coss crss ta=25 c single pulse mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit mo unted on a ceramic b oard (900mm 2 ? 0.8m m) 1unit
mch6601 no.6458-5/7 taping speci cation mch6601-tl-e
mch6601 no.6458-6/7 outline drawing land pattern example mch6601-tl-e mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
mch6601 ps no.6458-7/7 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. note on usage : since the mch6601 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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